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EMZB21C03G Datasheet - Excelliance MOS

EMZB21C03G MOSFET

N & P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: N‐CH P‐CH BVDSS 30V ‐30V RDSON (MAX.) 21mΩ 35mΩ ID 7.5A ‐6A UIS, Rg 100% Tested Pb‐Free Lead Plating & Halogen Free ESD Protection ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage VGS Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 100 °C Avalanche Current Avalanche Energy L = 0.1mH, ID=7.5A, RG=25Ω(N) L = 0.1mH, .

EMZB21C03G-ExcellianceMOS.pdf

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Datasheet Details

Part number:

EMZB21C03G

Manufacturer:

Excelliance MOS

File Size:

247.89 KB

Description:

Mosfet.

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