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EMZB08P03G Datasheet - Excelliance MOS

EMZB08P03G P?Channel Logic Level Enhancement Mode Field Effect Transistor

EMZB08P03G P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS ‐30V RDSON (MAX.) 8.5mΩ ID ‐15A UIS, Rg 100% Tested Pb‐Free Lead Plating & Halogen Free ESD Protection ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Avalanche Current Avalanche Energy L = 0.1mH, ID=‐25A, RG=25Ω Power Dissipation TA = 25 °.

EMZB08P03G-ExcellianceMOS.pdf

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Datasheet Details

Part number:

EMZB08P03G

Manufacturer:

Excelliance MOS

File Size:

183.68 KB

Description:

P?channel logic level enhancement mode field effect transistor.

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EMZB08P03G EMZB08P03G P ?Channel Logic Level Enhancement Mode Field Effect Transistor Excelliance MOS

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