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EMZB21A03VG Datasheet - Excelliance MOS

EMZB21A03VG MOSFET

Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V RDSON (MAX.) 21mΩ ID 9A UIS, Rg 100% Tested Pb‐Free Lead Plating & Halogen Free ESD Protection ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS PIN 1 SYMBOL Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C Avalanche Current Avalanche Energy Repetitive Avalanche Energy2 L = 0.1mH, ID=10A, RG=25Ω L = 0.05mH Pow.

EMZB21A03VG-ExcellianceMOS.pdf

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Datasheet Details

Part number:

EMZB21A03VG

Manufacturer:

Excelliance MOS

File Size:

197.31 KB

Description:

Mosfet.

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