EMZBB0N10J Datasheet - Excelliance MOS

EMZBB0N10J - MOSFET

N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 100V RDSON (MAX.) 200mΩ ID 1.7A Pb‐Free Lead Plating & Halogen Free ESD Protection ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 100 °C Power Dissipation TA = 25 °C TA = 100 °C Operating Junction & Storage Temperature Range VGS ID .

EMZBB0N10J-ExcellianceMOS.pdf

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Datasheet Details

Part number:

EMZBB0N10J

Manufacturer:

Excelliance MOS

File Size:

169.91 KB

Description:

Mosfet.

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EMZBB0N10J MOSFET Excelliance MOS