2N6518 Datasheet - Fairchild Semiconductor

2N6518 PNP Epitaxial Silicon Transistor

2N6518 2N6518 High Voltage Transistor Collector-Emitter Voltage: VCEO= -250V Collector Dissipation: PC (max)=625mW Complement to 2N6515 1 TO-92 PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Derate above 25°C Junction Temperature Storage Temperatu.

2N6518_FairchildSemiconductor.pdf