2N6519 Datasheet - Fairchild Semiconductor

2N6519 PNP Epitaxial Silicon Transistor

2N6519 2N6519 High Voltage Transistor Collector-Emitter Voltage: VCEO= -300V Collector Dissipation: PC (max)=625mW TO-92 1 PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Derate above 25°C Junction Temperature Storage Temperature 1. Emitter 2. Base 3. Colle.

2N6519 Datasheet (26.90 KB)