FDB029N06 Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. Applications Synchronous Rectification for ATX / Server / Tele PSU Battery Protection Circuit Motor Drives and Uninterruptible Power Supplies Renewable System D D G S D2-PAK G S MOSFET Maximum Ratings TC = 25oC...
FDB029N06 Key Features
- RDS(on) = 2.4 mΩ (Typ.) @ VGS = 10 V, ID = 75 A
- Fast Switching Speed
- Low Gate Charge
- High Performance Trench Technology for Extremely Low
- High Power and Current Handling Capability
- RoHS pliant
FDB029N06 Applications
- Synchronous Rectification for ATX / Server / Tele PSU
- Battery Protection Circuit