Datasheet Details
- Part number
- FDB029N06
- Manufacturer
- Fairchild Semiconductor
- File Size
- 580.30 KB
- Datasheet
- FDB029N06_FairchildSemiconductor.pdf
- Description
- N-Channel MOSFET
FDB029N06 Description
FDB029N06 * N-Channel PowerTrench® MOSFET FDB029N06 N-Channel PowerTrench® MOSFET 60 V, 193 A, 3.1 mΩ November 2013 .
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resist.
FDB029N06 Features
* RDS(on) = 2.4 mΩ (Typ. ) @ VGS = 10 V, ID = 75 A
* Fast Switching Speed
* Low Gate Charge
* High Performance Trench Technology for Extremely Low
RDS(on)
* High Power and Current Handling Capability
FDB029N06 Applications
* Synchronous Rectification for ATX / Server / Telecom PSU
* Battery Protection Circuit
* Motor Drives and Uninterruptible Power Supplies
* Renewable System
D
D
G S
D2-PAK
G
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS VGSS
ID
IDM EAS
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