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FDB029N06

N-Channel MOSFET

FDB029N06 Features

* RDS(on) = 2.4 mΩ (Typ.) @ VGS = 10 V, ID = 75 A

* Fast Switching Speed

* Low Gate Charge

* High Performance Trench Technology for Extremely Low RDS(on)

* High Power and Current Handling Capability

* RoHS Compliant Description This N-Channel MOSFET i

FDB029N06 General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. Applications

* Synchronous Rectification for ATX / Server / Telecom PSU

* Batte.

FDB029N06 Datasheet (580.30 KB)

Preview of FDB029N06 PDF

Datasheet Details

Part number:

FDB029N06

Manufacturer:

Fairchild Semiconductor

File Size:

580.30 KB

Description:

N-channel mosfet.

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TAGS

FDB029N06 N-Channel MOSFET Fairchild Semiconductor

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