Datasheet Details
- Part number
- FDB6676
- Manufacturer
- Fairchild Semiconductor
- File Size
- 82.16 KB
- Datasheet
- FDB6676_FairchildSemiconductor.pdf
- Description
- N-Channel MOSFET
FDB6676 Description
FDP6676/FDB6676 April 2001 FDP6676/FDB6676 30V N-Channel Logic Level PowerTrench MOSFET General .
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional sw.
FDB6676 Features
* 42 A, 30 V. RDS(ON) = 6.0 mΩ @ VGS = 10 V RDS(ON) = 7.5 mΩ @ VGS = 4.5 V
* Critical DC electrical parameters specified at elevated temperature
* High performance trench technology for extremely low RDS(ON)
FDB6676 Applications
* Synchronous rectifier
* DC/DC converter . D
D
G
G D S TO-220
FDP Series
G
S
TO-263AB
FDB Series
S
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current
* Continuous
* Pulsed
TA=25oC unless otherwise
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