FDB7030L Datasheet - Fairchild Semiconductor

FDB7030L N-Channel MOSFET

These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage app.

FDB7030L Features

* 100 A, 30 V. RDS(ON) = 0.007 Ω @ VGS=10 V RDS(ON) = 0.010 Ω @ VGS=5 V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. High density cell design for extremely low RDS(ON).

FDB7030L_FairchildSemiconductor.pdf