FDB7030L Datasheet, Mosfet, Fairchild Semiconductor

FDB7030L Features

• Mosfet 100 A, 30 V. RDS(ON) = 0.007 Ω @ VGS=10 V RDS(ON) = 0.010 Ω @ VGS=5 V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can elimin

PDF File Details

Part number:

FDB7030L

Manufacturer:

Fairchild Semiconductor

File Size:

471.44kb

Download:

📄 Datasheet

Description:

N-channel mosfet. These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell den

FDB7030L Application

• Applications such as DC/DC converters and high efficiency switching circuits where fast switching, low in-line power loss, and resistance to transie

TAGS

FDB7030L

Fairchild Semiconductor

📁 Related Datasheet

FDB7030BL - N-Channel MOSFET (Fairchild Semiconductor)
July 1998 FDP7030BL/FDB7030BL N-Channel Logic Level PowerTrenchTM MOSFET General Description This N-Channel Logic Level MOSFET has been designed spec.

FDB7042L - N-Channel MOSFET (Fairchild Semiconductor)
FDP7042L / FDB7042L June 2000 PRELIMINARY FDP7042L / FDB7042L N-Channel Logic Level PowerTrench MOSFET General Description This N-Channel MOSFET ha.

FDB7045L - N-Channel MOSFET (Fairchild Semiconductor)
FDP7045L/FDB7045L January 2000 FDP7045L/FDB7045L General Description N-Channel Logic Level PowerTrench® MOSFET Features • 100 A, 30 V. RDS(ON) = 0..

FDB016N04AL7 - N-Channel MOSFET (Fairchild Semiconductor)
FDB016N04AL7 N-Channel PowerTrench® MOSFET June 2014 FDB016N04AL7 N-Channel PowerTrench® MOSFET 40 V, 306 A, 1.6 mW Features • RDS(on) = 1.16 mW (T.

FDB024N04AL7 - MOSFET (Fairchild Semiconductor)
FDB024N04AL7 N-Channel PowerTrench® MOSFET June 2014 FDB024N04AL7 N-Channel PowerTrench® MOSFET 40 V, 219 A, 2.4 mΩ Features • RDS(on) = 2.0 mΩ (Ty.

FDB024N06 - N-Channel MOSFET (Fairchild Semiconductor)
FDB024N06 — N-Channel PowerTrench® MOSFET FDB024N06 N-Channel PowerTrench® MOSFET 60 V, 265 A, 2.4 mΩ November 2013 Features • RDS(on) = 1.8 mΩ (Ty.

FDB024N08BL7 - MOSFET (Fairchild Semiconductor)
FDB024N08BL7 N-Channel PowerTrench® MOSFET June 2014 FDB024N08BL7 N-Channel PowerTrench® MOSFET 80 V, 229 A, 2.4 mΩ Features • RDS(on) = 1.7 mΩ ( T.

FDB029N06 - N-Channel MOSFET (Fairchild Semiconductor)
FDB029N06 — N-Channel PowerTrench® MOSFET FDB029N06 N-Channel PowerTrench® MOSFET 60 V, 193 A, 3.1 mΩ November 2013 Features • RDS(on) = 2.4 mΩ (Ty.

FDB031N08 - N-Channel MOSFET (Fairchild Semiconductor)
FDB031N08 — N-Channel PowerTrench® MOSFET FDB031N08 N-Channel PowerTrench® MOSFET 75 V, 235 A, 3.1 mΩ November 2013 Features • RDS(on) = 2.4 mΩ (Ty.

FDB035AN06A0 - N-Channel MOSFET (Fairchild Semiconductor)
FDB035AN06A0 July 2002 FDB035AN06A0 N-Channel PowerTrench® MOSFET 60V, 80A, 3.5mΩ Features • r DS(ON) = 3.2mΩ (Typ.), V GS = 10V, ID = 80A • Qg(tot).