FDD8453LZ N-Channel Power Trench MOSFET

Fairchild Semiconductor

Description

FDD8453LZ N-Channel PowerTrench® MOSFET March 2015 FDD8453LZ N-Channel PowerTrench® MOSFET 40V, 50A, 6.7mΩ .
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-s.

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Datasheet Specifications

Part number: FDD8453LZ
Manufacturer: Fairchild Semiconductor
File Size: 444.27 KB
Datasheet: FDD8453LZ-FairchildSemiconductor.pdf
Description: N-Channel Power Trench MOSFET

Features

* Max rDS(on) = 6.7mΩ at VGS = 10V, ID = 15A
* Max rDS(on) = 8.7mΩ at VGS = 4.5V, ID = 13A
* HBM ESD protection level >7kV typical (Note 4)

Applications

* Inverter
* Synchronous Rectifier D G S D DT O- P-2A5K2 (TO-252) G S MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) -Continuous (

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FDD8453LZ N-Channel Power Trench MOSFET Fairchild Semiconductor

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