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FDD8453LZ_F085 N-Channel Power Trench MOSFET

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Description

FDD8453LZ_F085 N-Channel Power Trench® MOSFET FDD8453LZ_F085 N-Channel Power Trench® MOSFET 40V, 50A, 6.5mΩ Aug 2012 .
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-s.

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Features

* Typ rDS(on) = 5mΩ at VGS = 10V, ID = 15A
* Typ rDS(on) = 6mΩ at VGS = 4.5V, ID = 13A
* HBM ESD protection level > 7kv typical
* RoHS Compliant

Applications

* Inverter
* Synchronous Rectifier Package D G S D-PAK (TO-252) ©2012 Fairchild Semiconductor Corporation FDD8453LZ_F085 Rev. C1 Symbol D G S 1 www. fairchildsemi. com FDD8453LZ_F085 N-Channel Power Trench® MOSFET MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol Par

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FDD8453LZ_F085 N-Channel Power Trench MOSFET Fairchild Semiconductor
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