Datasheet Details
| Part number | FDMC8554 |
|---|---|
| Manufacturer | Fairchild ↗ Semiconductor |
| File Size | 207.66 KB |
| Description | N-Channel Power Trench MOSFET |
| Datasheet |
 FDMC8554_FairchildSemiconductor.pdf
|
| Part number | FDMC8554 |
|---|---|
| Manufacturer | Fairchild ↗ Semiconductor |
| File Size | 207.66 KB |
| Description | N-Channel Power Trench MOSFET |
| Datasheet |
FDMC8554_FairchildSemiconductor.pdf
|
Max rDS(on) = 5mΩ at VGS = 10V, ID = 16.5A Max rDS(on) = 6.4mΩ at VGS = 4.5V, ID = 14A Low Profile - 1mm max in a MicroFET 3.3x3.3 mm RoHS Compliant tm This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor‘s advanced Power Trench process.It has been optimized for switching performance and ultra low rdson.Application Synchronous rectifier ORing FET POL rectifier Bottom 7 8 D D D D Top 5 6 D D www.D
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