FDMS5352 - N-Channel Power Trench MOSFET

Fairchild Semiconductor

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Datasheet Details

Part number	FDMS5352
Manufacturer	Fairchild Semiconductor
File Size	370.07 KB
Description	N-Channel Power Trench MOSFET
Datasheet	FDMS5352-FairchildSemiconductor.pdf

FDMS5352 Product details

Description

Max rDS(on) = 6.7m: at VGS = 10V, ID = 13.6A Max rDS(on) = 8.2m: at VGS = 4.5V, ID = 12.3A Advanced Package and Silicon combination for low rDS(on) MSL1 robust package design This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. 100% UIL Tested Application RoHS Compliant

Features

General.

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Published: Sep 7, 2018 |