FDMS7670 Datasheet - Fairchild Semiconductor

FDMS7670 N-Channel MOSFET

This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and body dio.

FDMS7670 Features

* Max rDS(on) = 3.8 mΩ at VGS = 10 V, ID = 21 A

* Max rDS(on) = 5.0 mΩ at VGS = 4.5 V, ID = 17 A

* Advanced Package and Silicon design for low rDS(on) and high efficiency

* Next generation enhanced body diode technology, engineered for soft recovery. Provides Schottky

FDMS7670_FairchildSemiconductor.pdf