FDMS7658AS

N-Channel MOSFET

ON Semiconductor

FDMS7658AS Features

* Max rDS(on) = 1.9 mΩ at VGS = 10 V, ID = 28 A

* Max rDS(on) = 2.2 mΩ at VGS = 7 V, ID = 26 A

* Advanced Package and Silicon Combination for Low rDS(on) and High Efficiency General Description The FDMS7658AS has been designed to minimize losses in power conversion applicati

FDMS7658AS General Description

The FDMS7658AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Sc.

FDMS7658AS Datasheet (476.46 KB)