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FDMS7606 Dual N-Channel PowerTrench MOSFET

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Description

FDMS7606 Dual N-Channel PowerTrench® MOSFET May 2011 FDMS7606 Dual N-Channel PowerTrench® MOSFET Q1: 30 V, 12 A, 11.4 mΩ Q2: 30 V, 22 A, 11.6 mΩ Fe.
Q1: N-Channel. Max rDS(on) = 11. Max rDS(on) = 15.

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Datasheet Specifications

Part number
FDMS7606
Manufacturer
Fairchild Semiconductor
File Size
326.91 KB
Datasheet
FDMS7606-FairchildSemiconductor.pdf
Description
Dual N-Channel PowerTrench MOSFET

Applications

* Computing
* Communications
* General Purpose Point of Load
* Notebook Charger S2 S2 S2 G2 S1/D2 D1 D1 D1 D1 G1 Top Bottom Pin1 Power 56 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage G

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Fairchild Semiconductor FDMS7606-like datasheet