* General Description Q1: N-Channel
* Max rDS(on) = 11.4 mΩ at VGS = 10 V, ID = 11.5 A
* Max rDS(on) = 15.7 mΩ at VGS = 4.5 V, ID = 10 A Q2: N-Channel
* Max rDS(on) = 11.6 mΩ at VGS = 10 V, ID = 12 A
* Max rDS(on) = 17.2 mΩ at VGS = 4.5 V, ID = 9.5 A
* RoHS Co
FDMS7606 Datasheet (326.91 KB)
FDMS7606
Fairchild Semiconductor
326.91 KB
Dual n-channel powertrench mosfet.
FDMS7606 Dual N-Channel PowerTrench® MOSFET
May 2011
FDMS7606
Dual N-Channel PowerTrench® MOSFET
Q1: 30 V, 12 A, 11.4 mΩ Q2: 30 V, 22 A, 11.6 mΩ
Fe.
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