FDMS7694

N-Channel MOSFET

ON Semiconductor

FDMS7694 Features

* Max rDS(on) = 9.5 mΩ at VGS = 10 V, ID = 13.2 A

* Max rDS(on) = 14.5 mΩ at VGS = 4.5 V, ID = 10.5 A

* Advanced Package and Silicon combination for low rDS(on) and high efficiency

* Next generation enhanced body diode technology, engineered for soft recovery

FDMS7694 General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switching speed ang body diod.

FDMS7694 Datasheet (330.42 KB)