Datasheet4U Logo Datasheet4U.com

FDMS7678 - MOSFET

📥 Download Datasheet

Preview of FDMS7678 PDF
datasheet Preview Page 2 datasheet Preview Page 3

FDMS7678 Product details

Description

Max rDS(on) = 5.5 mΩ at VGS = 10 V, ID = 17.5 A Max rDS(on) = 6.8 mΩ at VGS = 4.5 V, ID = 15 A High Performance Technology for Extremely Low rDS(on) Termination is Lead-Free RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance.This device is well suited for Power Management and load switching applications common in N

Features

Other Datasheets by Fairchild Semiconductor
Published: |