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FDP045N10A - N-Channel PowerTrench MOSFET

FDP045N10A Description

FDP045N10A / FDI045N10A * N-Channel PowerTrench® MOSFET FDP045N10A / FDI045N10A N-Channel PowerTrench® MOSFET 100 V, 164 A, 4.5 mΩ November .
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resista.

FDP045N10A Features

* RDS(on) = 3.8 mΩ ( Typ. ) @ VGS = 10 V, ID = 100 A
* Fast Switching Speed
* Low Gate Charge, QG = 54 nC (Typ. )
* High Performance Trench Technology for Extremely Low RDS(on)
* High Power and Current Handling Capability

FDP045N10A Applications

* Synchronous Rectification for ATX / Server / Telecom PSU
* Battery Protection Circuit
* Motor drives and Uninterruptible Power Supplies
* Micro Solar Inverter D GDS TO-220 GDS I2-PAK G S MOSFET Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS VG

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N-Channel PowerTrench MOSFET Fairchild Semiconductor
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