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FDP045N10A - N-Channel PowerTrench MOSFET

Datasheet Summary

Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

Synchronous Rectification for ATX / Server / Telecom PSU Batter

Features

  • RDS(on) = 3.8 mΩ ( Typ. ) @ VGS = 10 V, ID = 100 A.
  • Fast Switching Speed.
  • Low Gate Charge, QG = 54 nC (Typ. ).
  • High Performance Trench Technology for Extremely Low RDS(on).
  • High Power and Current Handling Capability.
  • RoHS Compliant.

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Datasheet Details

Part number FDP045N10A
Manufacturer Fairchild Semiconductor
File Size 687.79 KB
Description N-Channel PowerTrench MOSFET
Datasheet download datasheet FDP045N10A Datasheet
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FDP045N10A / FDI045N10A — N-Channel PowerTrench® MOSFET FDP045N10A / FDI045N10A N-Channel PowerTrench® MOSFET 100 V, 164 A, 4.5 mΩ November 2013 Features • RDS(on) = 3.8 mΩ ( Typ.) @ VGS = 10 V, ID = 100 A • Fast Switching Speed • Low Gate Charge, QG = 54 nC (Typ.) • High Performance Trench Technology for Extremely Low RDS(on) • High Power and Current Handling Capability • RoHS Compliant Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
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