FDP2614 200V N-Channel MOSFET

Fairchild Semiconductor

Description

FDP2614 * N-Channel PowerTrench® MOSFET October 2013 FDP2614 N-Channel PowerTrench® MOSFET 200 V, 62 A, 27 mΩ .
This N-Channel MOSFET is producedusing Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resista.

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Datasheet Specifications

Part number: FDP2614
Manufacturer: Fairchild Semiconductor
File Size: 0.96 MB
Datasheet: FDP2614_FairchildSemiconductor.pdf
Description: 200V N-Channel MOSFET

Features

* RDS(on) = 22.9 mΩ ( Typ. )@ VGS = 10 V, ID = 31 A
* Fast Switching Speed
* Low Gate Charge
* High Performance Trench technology for Extremely Low RDS(on)
* High Power and Current Handing Capability

Applications

* Consumer Appliances
* Synchronous Rectification
* Battery Protection Circuit
* Motor Drives and Uninterruptible Power Supplies D GDS TO-220 Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter VDS VGS ID IDM EAS dv/dt PD Drain-Source Vo

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FDP2614 200V N-Channel MOSFET Fairchild Semiconductor

Fairchild Semiconductor FDP2614-like datasheet