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FDP2710-F085 - N-Channel MOSFET

FDP2710-F085 Description

FDP2710-F085 N-Channel PowerTrench® MOSFET FDP2710-F085 N-Channel PowerTrench® MOSFET 250V, 50A, 47mΩ General .
Features. Typ rDS(on) = 38mΩ at VGS = 10V, ID = 50A. Typ Qg(TOT) = 78nC at VGS = 10V. Fast switching speed. Low g.

FDP2710-F085 Features

* Typ rDS(on) = 38mΩ at VGS = 10V, ID = 50A
* Typ Qg(TOT) = 78nC at VGS = 10V
* Fast switching speed
* Low gate charge
* High performance trench technology for extremely low RDS(on) This N-Channel MOSFET is produced using ON Semiconductor’s advanced PowerTren

FDP2710-F085 Applications

* PDP application
* Hybrid Electric Vehicle DC/DC converters
* High power and current handling capability
* Qualified to AEC Q101
* RoHS Compliant ©2010 Semiconductor Components Industries, LLC. 1 September-2017, Rev. 1 Publication Order Number: FDP2710

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N-Channel MOSFET ON Semiconductor
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