FDP2710-F085 Datasheet - ON Semiconductor

Features

* Typ rDS(on) = 38mΩ at VGS = 10V, ID = 50A

* Typ Qg(TOT) = 78nC at VGS = 10V

* Fast switching speed

* Low gate charge

* High performance trench technology for extremely low RDS(on) This N-Channel MOSFET is produced using ON Semiconductor’s advanced PowerTren