FDP2D9N12C N-Channel MOSFET

ON Semiconductor

Description

MOSFET - N-Channel, Shielded Gate PowerTrench 120 V, 2.95 mW, 181 A FDP2D9N12C .

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FDP2D9N12C Datasheet Preview — Preview of FDP2D9N12C PDF

Datasheet Specifications

Part number: FDP2D9N12C
Manufacturer: ON Semiconductor ↗
File Size: 300.58 KB
Datasheet: FDP2D9N12C-ONSemiconductor.pdf
Description: N-Channel MOSFET

Features

* Shielded Gate MOSFET Technology
* Max RDS(on) = 2.95 mW at VGS = 10 V, ID = 181 A
* 50% Lower Qrr than Other MOSFET Suppliers
* Lowers Switching Noise/EMI
* 100% UIL Tested
* These Devices are Pb
* Free, Halogen
* Free and are RoHS Compli

Applications

* Synchronous Rectification for ATX / Server / Telecom PSU
* Motor Drives and Uninterruptible Power Supplies
* Micro Solar Inverter MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain
* to
* Source Voltage VDSS 120 V Gate

FDP2D9N12C Distributors

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N-Channel MOSFET ON Semiconductor

ON Semiconductor FDP2D9N12C-like datasheet