Datasheet Details
- Part number
- FDP2D9N12C
- Manufacturer
- ON Semiconductor ↗
- File Size
- 300.58 KB
- Datasheet
- FDP2D9N12C-ONSemiconductor.pdf
- Description
- N-Channel MOSFET
FDP2D9N12C Description
MOSFET - N-Channel, Shielded Gate PowerTrench 120 V, 2.95 mW, 181 A FDP2D9N12C .
FDP2D9N12C Features
* Shielded Gate MOSFET Technology
* Max RDS(on) = 2.95 mW at VGS = 10 V, ID = 181 A
* 50% Lower Qrr than Other MOSFET Suppliers
* Lowers Switching Noise/EMI
* 100% UIL Tested
* These Devices are Pb
* Free, Halogen
* Free and are RoHS Compli
FDP2D9N12C Applications
* Synchronous Rectification for ATX / Server / Telecom PSU
* Motor Drives and Uninterruptible Power Supplies
* Micro Solar Inverter
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain
* to
* Source Voltage
VDSS
120
V
Gate
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