FDP2D9N12C

N-Channel MOSFET

ON Semiconductor

* Shielded Gate MOSFET Technology

* Max RDS(on) = 2.95 mW at VGS = 10 V, ID = 181 A

* 50% Lower Qrr than Other MOSFET Suppliers

* Lowers Switching Noise/EMI

* 100% UIL Tested

* These Devices are Pb

* Free, Halogen

* Free and are RoHS Compli

FDP2D9N12C

300.58 KB

N-channel mosfet.

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FDP2D9N12C N-Channel MOSFET ON Semiconductor

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