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FDP2D9N12C - N-Channel MOSFET

FDP2D9N12C Description

MOSFET - N-Channel, Shielded Gate PowerTrench 120 V, 2.95 mW, 181 A FDP2D9N12C .

FDP2D9N12C Features

* Shielded Gate MOSFET Technology
* Max RDS(on) = 2.95 mW at VGS = 10 V, ID = 181 A
* 50% Lower Qrr than Other MOSFET Suppliers
* Lowers Switching Noise/EMI
* 100% UIL Tested
* These Devices are Pb
* Free, Halogen
* Free and are RoHS Compli

FDP2D9N12C Applications

* Synchronous Rectification for ATX / Server / Telecom PSU
* Motor Drives and Uninterruptible Power Supplies
* Micro Solar Inverter MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain
* to
* Source Voltage VDSS 120 V Gate

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