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FDP2D3N10C - N-Channel MOSFET

FDP2D3N10C Description

MOSFET * N-Channel, Shielded Gate POWERTRENCH) 100 V, 222 A, 2.3 mW FDP2D3N10C, FDPF2D3N10C General .
This N. Channel MV MOSFET is produced using onsemi’s advanced POWERTRENCH process that incorporates Shielded Gate technology.

FDP2D3N10C Features

* Max rDS(on) = 2.3 mW at VGS = 10 V, ID = 100 A
* Extremely Low Reverse Recovery Charge, Qrr
* 100% UIL Tested

FDP2D3N10C Applications

* Synchronous Rectification for ATX / Server / Telecom PSU
* Motor Drives and Uninterruptible Power Supplies
* Micro Solar Inverter DATA SHEET www. onsemi. com VDS rDS(ON) MAX ID MAX 100 V 2.3 mW @ 10 V 222 A
* Drain current limited by maximum junction temperatu

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N-Channel MOSFET ON Semiconductor
ON Semiconductor FDP2D3N10C-like datasheet