FDP2D3N10C Datasheet, Mosfet, ON Semiconductor

FDP2D3N10C Features

• Mosfet
• Max rDS(on) = 2.3 mW at VGS = 10 V, ID = 100 A
• Extremely Low Reverse Recovery Charge, Qrr
• 100% UIL Tested
• RoHS Compliant Applications
• S

PDF File Details

Part number:

FDP2D3N10C

Manufacturer:

ON Semiconductor ↗

File Size:

384.94kb

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📄 Datasheet

Description:

N-channel mosfet. This N

Channel MV MOSFET is produced using onsemi’s advanced POWERTRENCH process that incorporates Shielded Gate technology.

FDP2D3N10C Application

• Applications
• Synchronous Rectification for ATX / Server / Telecom PSU
• Motor Drives and Uninterruptible Power Supplies

TAGS

FDP2D3N10C

ON Semiconductor

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