Datasheet Details
- Part number
- FDP2D3N10C
- Manufacturer
- ON Semiconductor ↗
- File Size
- 384.94 KB
- Datasheet
- FDP2D3N10C-ONSemiconductor.pdf
- Description
- N-Channel MOSFET
FDP2D3N10C Description
MOSFET * N-Channel, Shielded Gate POWERTRENCH) 100 V, 222 A, 2.3 mW FDP2D3N10C, FDPF2D3N10C General .
This N.
Channel MV MOSFET is produced using onsemi’s
advanced POWERTRENCH process that incorporates Shielded Gate technology.
FDP2D3N10C Features
* Max rDS(on) = 2.3 mW at VGS = 10 V, ID = 100 A
* Extremely Low Reverse Recovery Charge, Qrr
* 100% UIL Tested
FDP2D3N10C Applications
* Synchronous Rectification for ATX / Server / Telecom PSU
* Motor Drives and Uninterruptible Power Supplies
* Micro Solar Inverter
DATA SHEET www. onsemi. com
VDS
rDS(ON) MAX
ID MAX
100 V
2.3 mW @ 10 V
222 A
* Drain current limited by maximum junction temperatu
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