Datasheet4U Logo Datasheet4U.com

FDP2D3N10C - N-Channel MOSFET

FDP2D3N10C Description

MOSFET * N-Channel, Shielded Gate POWERTRENCH) 100 V, 222 A, 2.3 mW FDP2D3N10C, FDPF2D3N10C General .
This N. Channel MV MOSFET is produced using onsemi’s advanced POWERTRENCH process that incorporates Shielded Gate technology.

FDP2D3N10C Features

* Max rDS(on) = 2.3 mW at VGS = 10 V, ID = 100 A
* Extremely Low Reverse Recovery Charge, Qrr
* 100% UIL Tested

FDP2D3N10C Applications

* Synchronous Rectification for ATX / Server / Telecom PSU
* Motor Drives and Uninterruptible Power Supplies
* Micro Solar Inverter DATA SHEET www. onsemi. com VDS rDS(ON) MAX ID MAX 100 V 2.3 mW @ 10 V 222 A
* Drain current limited by maximum junction temperatu

📥 Download Datasheet

Preview of FDP2D3N10C PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • FDP20AN06A0 - N-Channel MOSFET (Fairchild Semiconductor)
  • FDP20N40 - N-Channel Power MOSFET (Fairchild Semiconductor)
  • FDP20N50 - N-Channel MOSFET (Fairchild Semiconductor)
  • FDP20N50F - N-Channel MOSFET (Fairchild Semiconductor)
  • FDP22N50N - MOSFET (Fairchild Semiconductor)
  • FDP24AN06LA0 - N-Channel MOSFET (Fairchild Semiconductor)
  • FDP24N40 - N-Channel MOSFET (Fairchild Semiconductor)
  • FDP2532 - N-Channel MOSFET (Fairchild Semiconductor)

📌 All Tags

ON Semiconductor FDP2D3N10C-like datasheet