FDP2710 250V N-Channel MOSFET

Fairchild Semiconductor

Description

FDP2710 * N-Channel PowerTrench® MOSFET October 2013 FDP2710 N-Channel PowerTrench® MOSFET 250 V, 50 A, 42.5 mΩ .
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resist.

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Datasheet Specifications

Part number: FDP2710
Manufacturer: Fairchild Semiconductor
File Size: 1.08 MB
Datasheet: FDP2710_FairchildSemiconductor.pdf
Description: 250V N-Channel MOSFET

Features

* RDS(on) = 36.3 mΩ ( Typ. )@ VGS = 10 V, ID = 25 A
* Fast Switching Speed
* Low Gate Charge
* High Performance Trench technology for Extremely Low RDS(on)
* High Power and Current Handing Capability

Applications

* Consumer Appliances
* Synchronous Rectification D GDS TO-220 Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter VDS VGS ID IDM EAS dv/dt PD TJ, TSTG TL Drain-Source Voltage Gate-Source voltage Drain Current Drain Current - Continuous (TC = 25°C) -

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FDP2710 250V N-Channel MOSFET Fairchild Semiconductor

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