Datasheet Details
- Part number
- FDP2710
- Manufacturer
- Fairchild Semiconductor
- File Size
- 1.08 MB
- Datasheet
- FDP2710_FairchildSemiconductor.pdf
- Description
- 250V N-Channel MOSFET
FDP2710 Description
FDP2710 * N-Channel PowerTrench® MOSFET October 2013 FDP2710 N-Channel PowerTrench® MOSFET 250 V, 50 A, 42.5 mΩ .
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resist.
FDP2710 Features
* RDS(on) = 36.3 mΩ ( Typ. )@ VGS = 10 V, ID = 25 A
* Fast Switching Speed
* Low Gate Charge
* High Performance Trench technology for Extremely Low
RDS(on)
* High Power and Current Handing Capability
FDP2710 Applications
* Consumer Appliances
* Synchronous Rectification
D
GDS
TO-220
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDS VGS ID
IDM EAS dv/dt PD
TJ, TSTG TL
Drain-Source Voltage
Gate-Source voltage
Drain Current Drain Current
- Continuous (TC = 25°C) -
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