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FDP2710 - N-Channel MOSFET

FDP2710 Description

isc N-Channel MOSFET Transistor *.

FDP2710 Features

* With TO-220 packaging
* Drain Source Voltage- : VDSS ≥ 250V
* Static drain-source on-resistance: RDS(on) ≤ 42.5mΩ@VGS=10V
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

FDP2710 Applications

* Power supply
* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 250 V VGSS Gate-Source Voltage ±30 V ID Drain Current-Continuous;@Tc=25℃ 50 A PD Total Dissipation 260 W Tj Operating Junction Temperature

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Datasheet Details

Part number
FDP2710
Manufacturer
INCHANGE
File Size
278.58 KB
Datasheet
FDP2710-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
INCHANGE FDP2710-like datasheet