Datasheet Details
- Part number
- FDP2D3N10C
- Manufacturer
- INCHANGE
- File Size
- 278.50 KB
- Datasheet
- FDP2D3N10C-INCHANGE.pdf
- Description
- N-Channel MOSFET
FDP2D3N10C Description
isc N-Channel MOSFET Transistor *.
FDP2D3N10C Features
* With TO-220 packaging
* Drain Source Voltage-
: VDSS ≥ 100V
* Static drain-source on-resistance:
RDS(on) ≤ 2.3mΩ@VGS=10V
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device
performance and reliable operation
FDP2D3N10C Applications
* Power supply
* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
100
V
VGSS
Gate-Source Voltage
±20
V
ID
Drain Current-Continuous;@Tc=25℃
222
A
PD
Total Dissipation
214
W
Tj
Operating Junction Temperature
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