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FDP2D3N10C - N-Channel MOSFET

FDP2D3N10C Description

isc N-Channel MOSFET Transistor *.

FDP2D3N10C Features

* With TO-220 packaging
* Drain Source Voltage- : VDSS ≥ 100V
* Static drain-source on-resistance: RDS(on) ≤ 2.3mΩ@VGS=10V
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

FDP2D3N10C Applications

* Power supply
* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGSS Gate-Source Voltage ±20 V ID Drain Current-Continuous;@Tc=25℃ 222 A PD Total Dissipation 214 W Tj Operating Junction Temperature

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Datasheet Details

Part number
FDP2D3N10C
Manufacturer
INCHANGE
File Size
278.50 KB
Datasheet
FDP2D3N10C-INCHANGE.pdf
Description
N-Channel MOSFET

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INCHANGE FDP2D3N10C-like datasheet