FDP7030L

N-Channel MOSFET

Fairchild Semiconductor

FDP7030L Features

* 100 A, 30 V. RDS(ON) = 0.007 Ω @ VGS=10 V RDS(ON) = 0.010 Ω @ VGS=5 V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. High density cell design for extremely low RDS(ON).

FDP7030L General Description

These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage app.

FDP7030L Datasheet (471.44 KB)

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Datasheet Details

Part number:

FDP7030L

Manufacturer:

Fairchild Semiconductor

File Size:

471.44 KB

Description:

N-channel mosfet.

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FDP7030L N-Channel MOSFET Fairchild Semiconductor

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FDP7030L Features

FDP7030L General Description

Datasheet Details

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