FDPC8011S - MOSFET
Q1: N-Channel * Max rDS(on) = 7.3 mΩ at VGS = 4.5 V, ID = 12 A Q2: N-Channel * Max rDS(on) = 2.1 mΩ at VGS = 4.5 V, ID = 24 A * Low inductance packaging shortens rise/fall times, resulting in lower switching losses * MOSFET integration enables optimum layout for lowe
