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FDPC8011S - MOSFET

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FDPC8011S Product details

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Q1: N-Channel Max rDS(on) = 7.3 mΩ at VGS = 4.5 V, ID = 12 A Q2: N-Channel Max rDS(on) = 2.1 mΩ at VGS = 4.5 V, ID = 24 A Low inductance packaging shortens rise/fall times, resulting in lower switching losses MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing RoHS Compliant This device includes two specialized N-Channel MOSFETs in a dual package.The switch node has been internally connected t

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