FDPC5030SG - Dual N-Channel MOSFET

ON Semiconductor

FDPC5030SG Datasheet Preview — Preview of FDPC5030SG PDF

Datasheet Details

Part number	FDPC5030SG
Manufacturer	ON Semiconductor ↗
File Size	548.69 KB
Description	Dual N-Channel MOSFET
Datasheet	FDPC5030SG-ONSemiconductor.pdf

FDPC5030SG Product details

Description

This device includes two specialized N-Channel MOSFETs in a dual package.The switch node has been internally connected to enable easy placement and routing of synchronous buck converters.The control MOSFET (Q1) and synchronous SyncFETt (Q2) have been designed to provide optimal power efficiency.

Features

Q1: N-Channel.
Max RDS(on) = 5.0 mW at VGS = 10 V, ID = 17 A.
Max RDS(on) = 6.5 mW at VGS = 4.5 V, ID = 14 A Q2: N-Channel.
Max RDS(on) = 2.4 mW at VGS = 10 V, ID = 25 A.
Max RDS(on) = 3.0 mW at VGS = 4.5 V, ID = 22 A.
Low Inductance Packaging Shortens Rise/Fall Times, Resulting in Lower Switching Losses.
MOSFET Integration Enables Optimum Layout for Lower Circuit Inductance and Reduced Switch Node Ringing.
RoHS Compliant.

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Published: Mar 22, 2020 |