FDPC5030SG Datasheet - ON Semiconductor

FDPC5030SG Dual N-Channel MOSFET

This device includes two specialized N-Channel MOSFETs in a dual package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFETt (Q2) have been designed to provide optimal power efficiency. F.

FDPC5030SG Features

* Q1: N-Channel

* Max RDS(on) = 5.0 mW at VGS = 10 V, ID = 17 A

* Max RDS(on) = 6.5 mW at VGS = 4.5 V, ID = 14 A Q2: N-Channel

* Max RDS(on) = 2.4 mW at VGS = 10 V, ID = 25 A

* Max RDS(on) = 3.0 mW at VGS = 4.5 V, ID = 22 A

* Low Inductance Packaging Shortens Rise/Fall Times, Resul

FDPC5030SG-ONSemiconductor.pdf