FDPC8016S - MOSFET
Q1: N-Channel * Max rDS(on) = 3.8 mΩ at VGS = 10 V, ID = 20 A * Max rDS(on) = 4.7 mΩ at VGS = 4.5 V, ID = 18 A Q2: N-Channel * Max rDS(on) = 1.4 mΩ at VGS = 10 V, ID = 35 A * Max rDS(on) = 1.7 mΩ at VGS = 4.5 V, ID = 32 A * Low inductance packaging shortens r
