FDZ291P Datasheet (Fairchild Semiconductor) - P-Channel 1.5 V Specified PowerTrench BGA MOSFET

FDZ291P, P-Channel 1.5 V Specified PowerTrench BGA MOSFET

Combining Fairchild’s advanced 1.5V specified PowerTrench process with state of the art BGA packaging, the FDZ291P minimizes both PCB space and RDS(ON).

This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, hig

FDZ291P Features

* 4.6 A,

* 20 V RDS(ON) = 40 mΩ @ VGS =

* 4.5 V RDS(ON) = 60 mΩ @ VGS =

* 2.5 V RDS(ON) = 160 mΩ @ VGS =

* 1.5 V

* Occupies only 2.25 mm2 of PCB area. Less than 50% of the area of a SSOT-6

* Ultra-thin package: less than 0.85 mm height wh