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FDZ291P P-Channel 1.5 V Specified PowerTrench BGA MOSFET

FDZ291P Description

FDZ291P P-Channel 1.5 V Specified PowerTrench® BGA MOSFET February 2006 FDZ291P P-Channel 1.5 V Specified PowerTrench® BGA MOSFET General Descriptio.
Combining Fairchild’s advanced 1.

FDZ291P Features

* 4.6 A,
* 20 V RDS(ON) = 40 mΩ @ VGS =
* 4.5 V RDS(ON) = 60 mΩ @ VGS =
* 2.5 V RDS(ON) = 160 mΩ @ VGS =
* 1.5 V
* Occupies only 2.25 mm2 of PCB area. Less than 50% of the area of a SSOT-6
* Ultra-thin package: less than 0.85 mm height wh

FDZ291P Applications

* Battery management
* Load switch
* Battery protection GATE G D Bottom Top TA=25 C unless otherwise noted o Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current
* Continuous
* Pulsed Parameter

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Datasheet Details

Part number
FDZ291P
Manufacturer
Fairchild Semiconductor
File Size
246.72 KB
Datasheet
FDZ291P_FairchildSemiconductor.pdf
Description
P-Channel 1.5 V Specified PowerTrench BGA MOSFET

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P-Channel 1.5 Specified PowerTrench BGA MOSFET Fairchild Semiconductor
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