FDZ299P P-Channel 2.5 V Specified PowerTrench BGA MOSFET

Fairchild Semiconductor

Description

FDZ299P February 2004 FDZ299P P-Channel 2.5 V Specified PowerTrench® BGA MOSFET General .
Combining Fairchild’s advanced 2.

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Datasheet Specifications

Part number: FDZ299P
Manufacturer: Fairchild Semiconductor
File Size: 178.74 KB
Datasheet: FDZ299P_FairchildSemiconductor.pdf
Description: P-Channel 2.5 V Specified PowerTrench BGA MOSFET

Features

* 4.6 A,
* 20 V RDS(ON) = 55 mΩ @ VGS =
* 4.5 V RDS(ON) = 80 mΩ @ VGS =
* 2.5 V
* Occupies only 2.25 mm2 of PCB area. Less than 50% of the area of a SSOT-6
* Ultra-thin package: less than 0.80 mm height when mounted to PCB
* Outstanding

Applications

* Battery management
* Load switch
* Battery protection S B G Bottom Top TA=25oC unless otherwise noted D Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current
* Continuous
* Pulsed Parameter Ra

FDZ299P Distributors

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FDZ299P P-Channel 2.5 Specified PowerTrench BGA MOSFET Fairchild Semiconductor

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