FDZ298N N-Channel 2.5 V Specified PowerTrench BGA MOSFET

Fairchild Semiconductor

Description

FDZ298N February 2004 FDZ298N N-Channel 2.5 V Specified PowerTrench® BGA MOSFET General .
Combining Fairchild’s advanced 2.

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Datasheet Specifications

Part number: FDZ298N
Manufacturer: Fairchild Semiconductor
File Size: 170.20 KB
Datasheet: FDZ298N_FairchildSemiconductor.pdf
Description: N-Channel 2.5 V Specified PowerTrench BGA MOSFET

Features

* 6 A, 20 V RDS(ON) = 27 mΩ @ VGS = 4.5 V RDS(ON) = 39 mΩ @ VGS = 2.5 V
* Occupies only 2.25 mm2 of PCB area. Less than 50% of the area of a SSOT-6
* Ultra-thin package: less than 0.80 mm height when mounted to PCB
* Outstanding thermal transfer characteristics: 4 ti

Applications

* Battery management
* Battery protection D D S S D P in 1 D C S G S S G Bottom Top TA=25oC unless otherwise noted S Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current
* Continuous
* Pulsed Par

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FDZ298N N-Channel 2.5 Specified PowerTrench BGA MOSFET Fairchild Semiconductor

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