FGA30N60LSD
Fairchild Semiconductor
806.25kb
Mosfets and bipolar transistors.
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FGA30N65SMD - Field Stop IGBT
(Fairchild Semiconductor)
FGA30N65SMD 650 V, 30 A Field Stop IGBT
July 2013
FGA30N65SMD
650 V, 30 A Field Stop IGBT
Features
• Maximum Junction Temperature : TJ =175 C • Posi.
FGA30N120FTD - Trench IGBT
(Fairchild Semiconductor)
FGA30N120FTD 1200 V, 30 A Field Stop Trench IGBT
April 2013
FGA30N120FTD
1200 V, 30 A Field Stop Trench IGBT
Features
• Field Stop Trench Technolog.
FGA3060ADF - Field Stop Trench IGBT
(Fairchild Semiconductor)
FGA3060ADF — 600 V, 30 A Field Stop Trench IGBT
FGA3060ADF
600 V, 30 A Field Stop Trench IGBT
July 2015
Features
• Maximum Junction Temperature : T.
FGA30S120P - IGBT
(Fairchild Semiconductor)
FGA30S120P Shorted AnodeTM IGBT
FGA30S120P
Shorted AnodeTM IGBT
Features
• High speed switching • Low saturation voltage: VCE(sat) =1.75V @ IC = 30A .
FGA30T65SHD - IGBT
(Fairchild Semiconductor)
FGA30T65SHD 650 V, 30 A Field Stop Trench IGBT
FGA30T65SHD
650 V, 30 A Field Stop Trench IGBT
December 2014
Features
• Maximum Junction Temperature.
FGA04 - Photodiodes
(Thorlabs)
435 Route 206 • P.O. Box 366 Newton, NJ 07860-0366
FGA04 InGaAs Photodiode
High Responsivity Low Capacitance: High Speed Fiber Compatible with FC Con.
FGA10 - Photodiodes
(Thorlabs)
435 Route 206 • P.O. Box 366 Newton, NJ 07860-0366
PH. 973-579-7227 FAX 973-300-3600
FGA10 InGaAs Photodiode --High Responsivity
--Low Capacitance: .
FGA120N30D - 300V PDP IGBT
(Fairchild Semiconductor)
..
FGA120N30D 300V PDP IGBT
June 2006
FGA120N30D
300V PDP IGBT
Features
• High Current Capability • Low saturation voltage: VCE(sa.
FGA15N120AN - NPT Igbt
(Fairchild Semiconductor)
FGA15N120AN
IGBT
FGA15N120AN
General Description
Employing NPT technology, Fairchild’s AN series of IGBTs provides low conduction and switching losse.
FGA15N120AND - IGBT
(Fairchild Semiconductor)
..
FGA15N120AND
IGBT
FGA15N120AND
General Description
Employing NPT technology, Fairchild’s AND series of IGBTs provides low conduc.
