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FGA25S125P 25A Shorted-anode IGBT

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Description

FGA25S125P * 1250 V, 25 A Shorted-anode IGBT FGA25S125P 1250 V, 25 A Shorted-anode IGBT .
Using advanced field stop trench and shorted-anode technology, ON Semiconductor's shorted-anode trench IGBTs offer superior con-duction and switching.

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Features

* High Speed Switching
* Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 25 A
* High Input Impedance

FGA25S125P Distributors

📁 Related Datasheet

FGA25N120AN FGA25N120AND FGA25N120ANTD FGA25N120ANTDTU FGA25N120ANTD_F109 FGA25N120FTD

📌 All Tags

FGA25S125P 25A Shorted-anode IGBT ON Semiconductor
ON Semiconductor FGA25S125P-like datasheet
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