Datasheet4U Logo Datasheet4U.com

FQB2N60 Datasheet - Fairchild Semiconductor

FQB2N60 600V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i.

FQB2N60 Features

* 2.4A, 600V, RDS(on) = 4.7Ω @VGS = 10 V Low gate charge ( typical 9.0 nC) Low Crss ( typical 5.0 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G S D2-PAK FQB Series G D S I2-PAK FQI Series G! ! " " " !

FQB2N60_FairchildSemiconductor.pdf

Preview of FQB2N60 PDF
FQB2N60 Datasheet Preview Page 2 FQB2N60 Datasheet Preview Page 3

Datasheet Details

Part number:

FQB2N60

Manufacturer:

Fairchild Semiconductor

File Size:

580.92 KB

Description:

600v n-channel mosfet.

FQB2N60 Distributor

📁 Related Datasheet

FQB2N30 300V N-Channel MOSFET (Fairchild Semiconductor)

FQB2N50 500V N-Channel MOSFET (Fairchild Semiconductor)

FQB2N80 800V N-Channel MOSFET (Fairchild Semiconductor)

FQB2N90 900V N-Channel MOSFET (Fairchild Semiconductor)

FQB2NA90 900V N-Channel MOSFET (Fairchild Semiconductor)

FQB200N04 N-Channel Enhancement Mode Power MOSFET (OuCan)

FQB20N06 60V N-Channel MOSFET (Fairchild Semiconductor)

FQB20N06L 60V LOGIC N-Channel MOSFET (Fairchild Semiconductor)

TAGS

FQB2N60 FQB2N60 600V N-Channel MOSFET Fairchild Semiconductor