Datasheet Details
Part number:
FQB2N60
Manufacturer:
Fairchild Semiconductor
File Size:
580.92 KB
Description:
600V N-Channel MOSFET
Features
* 2.4A, 600V, RDS(on) = 4.7Ω @VGS = 10 V Low gate charge ( typical 9.0 nC) Low Crss ( typical 5.0 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G S D2-PAK FQB Series G D S I2-PAK FQI Series G! ! " " " !
FQB2N60_FairchildSemiconductor.pdf
FQB2N60, 600V N-Channel MOSFET
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i
FQB2N60 Distributor
📁 Related Datasheet
📌 All Tags
