FQB2N80 Datasheet - Fairchild Semiconductor

FQB2N80 800V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i.

FQB2N80 Features

* 2.4A, 800V, RDS(on) = 6.3Ω @VGS = 10 V Low gate charge ( typical 12 nC) Low Crss ( typical 5.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G S G! 3 " " 5 D2-PAK FQB Series G D S I2-PAK FQI Series !

FQB2N80_FairchildSemiconductor.pdf