Datasheet Details
Part number:
FQB2N80
Manufacturer:
Fairchild Semiconductor
File Size:
659.15 KB
Description:
800V N-Channel MOSFET
Features
* 2.4A, 800V, RDS(on) = 6.3Ω @VGS = 10 V Low gate charge ( typical 12 nC) Low Crss ( typical 5.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G S G! 3 " " 5 D2-PAK FQB Series G D S I2-PAK FQI Series !
FQB2N80_FairchildSemiconductor.pdf
FQB2N80, 800V N-Channel MOSFET
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i
FQB2N80 Distributor
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