FQB7N60 Datasheet - Fairchild Semiconductor

FQB7N60 600V N-Channel MOSFET

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy .

FQB7N60 Features

* 7.4 A, 600 V, RDS(on) = 1.0 Ω (Max.) @VGS = 10 V, ID = 3.7 A

* Low Gate Charge (Typ. 29 nC)

* Low Crss (Typ. 16 pF)

* 100% Avalanche Tested D D G S D2-PAK GDS I2-PAK G Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol Parameter VDSS ID IDM

FQB7N60_FairchildSemiconductor.pdf