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FQD7N10 Datasheet - Fairchild Semiconductor

100V N-Channel MOSFET

FQD7N10 Features

* 5.8A, 100V, RDS(on) = 0.35Ω @VGS = 10 V Low gate charge ( typical 5.8 nC) Low Crss ( typical 10 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G! G S ! " " " D-PAK FQD Series I-PAK G D S FQU Series ! S Ab

FQD7N10 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the .

FQD7N10 Datasheet (544.88 KB)

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Datasheet Details

Part number:

FQD7N10

Manufacturer:

Fairchild Semiconductor

File Size:

544.88 KB

Description:

100v n-channel mosfet.

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FQD7N10 100V N-Channel MOSFET Fairchild Semiconductor

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