FQD7N10 100V N-Channel MOSFET

Fairchild Semiconductor

Description

FQD7N10 / FQU7N10 December 2000 QFET FQD7N10 / FQU7N10 100V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

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Datasheet Specifications

Part number: FQD7N10
Manufacturer: Fairchild Semiconductor
File Size: 544.88 KB
Datasheet: FQD7N10_FairchildSemiconductor.pdf
Description: 100V N-Channel MOSFET

Features

* 5.8A, 100V, RDS(on) = 0.35Ω @VGS = 10 V Low gate charge ( typical 5.8 nC) Low Crss ( typical 10 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G! G S ! " " " D-PAK FQD Series I-PAK G D S FQU Series ! S Ab

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FQD7N10 100V N-Channel MOSFET Fairchild Semiconductor

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