FQD7N10L Datasheet (Fairchild Semiconductor) - 100V LOGIC N-Channel MOSFET

FQD7N10L, 100V LOGIC N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the

FQD7N10L Features

* 5.8A, 100V, RDS(on) = 0.35Ω @VGS = 10 V Low gate charge ( typical 4.6 nC) Low Crss ( typical 12 pF) Fast switching 100% avalanche tested Improved dv/dt capability Low level gate drive requirments allowing direct operation from log