FQH18N50V2 Datasheet - Fairchild Semiconductor

FQH18N50V2 500V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i.

FQH18N50V2 Features

* 20A, 500V, RDS(on) = 0.265Ω @VGS = 10 V Low gate charge ( typical 42 nC) Low Crss ( typical 11 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! " G! G D S ! " " " TO-247 FQH Series ! S Absolute Maximum Ratings S

FQH18N50V2_FairchildSemiconductor.pdf