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FQH35N40

MOSFET

FQH35N40 Features

* 35A, 400V, RDS(on) = 0.105Ω @VGS = 10 V

* Low gate charge ( typical 110 nC)

* Low Crss ( typical 65 pF)

* Fast switching

* 100% avalanche tested

* Improved dv/dt capability July 2005 QFET® Description These N-Channel enhancement mode power field eff

FQH35N40 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i.

FQH35N40 Datasheet (694.74 KB)

Preview of FQH35N40 PDF

Datasheet Details

Part number:

FQH35N40

Manufacturer:

Fairchild Semiconductor

File Size:

694.74 KB

Description:

Mosfet.

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TAGS

FQH35N40 MOSFET Fairchild Semiconductor

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