FQH8N100C - MOSFET
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.
This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy
FQH8N100C Features
* 8 A, 1000 V, RDS(on) = 1.45 Ω (Max.) @ VGS = 10 V
* Low Gate Charge (Typ. 53 nC)
* Low Crss (Typ. 16 pF)
* Fast Switching
* 100% Avalanche Tested
* Improved dv/dt Capability
* RoHS Compliant D G D S TO-247 G Absolute Maximum Ratings TC =
