FQH44N10 - MOSFET
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.
This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy
FQH44N10 Features
* 48 A, 100 V, RDS(on) = 39 m (Max.) @ VGS = 10 V, ID = 24 A
* Low Gate Charge (Typ. 48 nC)
* Low Crss (Typ. 85 pF)
* 100% Avalanche Tested
* 175C Maximum Junction Temperature Rating D G D S TO-247 Absolute Maximum Ratings TC = 25oC unless otherwise note
