FQH44N10 Datasheet - Fairchild Semiconductor

FQH44N10 MOSFET

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy .

FQH44N10 Features

* 48 A, 100 V, RDS(on) = 39 m (Max.) @ VGS = 10 V, ID = 24 A

* Low Gate Charge (Typ. 48 nC)

* Low Crss (Typ. 85 pF)

* 100% Avalanche Tested

* 175C Maximum Junction Temperature Rating D G D S TO-247 Absolute Maximum Ratings TC = 25oC unless otherwise note

FQH44N10-FairchildSemiconductor.pdf