FQH44N10_F133 - MOSFET

Fairchild Semiconductor

Datasheet Details

Part number	FQH44N10_F133
Manufacturer	Fairchild ↗ Semiconductor
File Size	910.33 KB
Description	MOSFET
Datasheet	FQH44N10_F133-FairchildSemiconductor.pdf

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

48A, 100V, RDS(on) = 0.039Ω @VGS = 10 V.
Low gate charge ( typical 48 nC).
Low Crss ( typical 85 pF).
Fast switching.
100% avalanche tested.
Improved dv/dt capability.
175°C maximum junction temperature rating D G GD S TO-247 FQH Series S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-S.

📁 FQH44N10_F133 Similar Datasheet

Other Datasheets by Fairchild Semiconductor

Published: Jan 16, 2017 |