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FQH44N10_F133 MOSFET

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Description

FQH44N10_F133 FQH44N10_F133 100V N-Channel MOSFET Octorber 2008 QFET ® General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

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Features

* 48A, 100V, RDS(on) = 0.039Ω @VGS = 10 V
* Low gate charge ( typical 48 nC)
* Low Crss ( typical 85 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability
* 175°C maximum junction temperature rating D G GD S TO-247 FQH Se

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