FQH44N10_F133 Datasheet - Fairchild Semiconductor

FQH44N10_F133 MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i.

FQH44N10_F133 Features

* 48A, 100V, RDS(on) = 0.039Ω @VGS = 10 V

* Low gate charge ( typical 48 nC)

* Low Crss ( typical 85 pF)

* Fast switching

* 100% avalanche tested

* Improved dv/dt capability

* 175°C maximum junction temperature rating D G GD S TO-247 FQH Se

FQH44N10_F133-FairchildSemiconductor.pdf

FQH44N10_F133 Datasheet Preview — Preview of FQH44N10_F133 PDF

Datasheet Details

Part number:

FQH44N10_F133

Manufacturer:

Fairchild Semiconductor

File Size:

910.33 KB

Description:

Mosfet.

📁 Related Datasheet

FQH44N10 MOSFET (Fairchild Semiconductor)

FQH44N10 N-Channel QFET MOSFET (ON Semiconductor)

FQH140N10 100V N-Channel MOSFET (Fairchild Semiconductor)

FQH18N50V2 500V N-Channel MOSFET (Fairchild Semiconductor)

FQH35N40 MOSFET (Fairchild Semiconductor)

FQH70N10 MOSFET (Fairchild Semiconductor)

FQH8N100C MOSFET (Fairchild Semiconductor)

FQH8N100C N-Channel MOSFET (ON Semiconductor)

TAGS

FQH44N10_F133 FQH44N10_F133 MOSFET Fairchild Semiconductor

FQH44N10_F133 Distributor