FQH70N10 - MOSFET
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i
FQH70N10 Features
* 70A, 100V, RDS(on) = 0.023Ω @VGS = 10 V
* Low gate charge ( typical 85 nC)
* Low Crss ( typical 150 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability
* 175°C maximum junction temperature rating GD S TO-247 FQH Series
