FQH70N10 Datasheet - Fairchild Semiconductor

FQH70N10 MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i.

FQH70N10 Features

* 70A, 100V, RDS(on) = 0.023Ω @VGS = 10 V

* Low gate charge ( typical 85 nC)

* Low Crss ( typical 150 pF)

* Fast switching

* 100% avalanche tested

* Improved dv/dt capability

* 175°C maximum junction temperature rating GD S TO-247 FQH Series

FQH70N10-FairchildSemiconductor.pdf

FQH70N10 Datasheet Preview — Preview of FQH70N10 PDF

Datasheet Details

Part number:

FQH70N10

Manufacturer:

Fairchild Semiconductor

File Size:

662.93 KB

Description:

Mosfet.

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FQH70N10 FQH70N10 MOSFET Fairchild Semiconductor

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