Datasheet4U Logo Datasheet4U.com

FQH90N15 - N-Channel Power MOSFET

Datasheet Summary

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

  • 90A, 150V, RDS(on) = 0.018Ω @VGS = 10 V.
  • Low gate charge (typical 220 nC).
  • Low Crss (typical 200 pF).
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability.
  • 175°C maximum junction temperature rating QFET.

📥 Download Datasheet

Datasheet preview – FQH90N15

Datasheet Details

Part number FQH90N15
Manufacturer Fairchild Semiconductor
File Size 1.00 MB
Description N-Channel Power MOSFET
Datasheet download datasheet FQH90N15 Datasheet
Additional preview pages of the FQH90N15 datasheet.

📁 Similar Datasheet

  • FQH44N10 - N-Channel QFET MOSFET (ON Semiconductor)
  • FQH8N100C - N-Channel MOSFET (ON Semiconductor)
Other Datasheets by Fairchild Semiconductor

Full PDF Text Transcription

Click to expand full text
FQH90N15 / FQA90N15 N-Channel Power MOSFET FQH90N15 / FQA90N15 N-Channel Power MOSFET Features • 90A, 150V, RDS(on) = 0.018Ω @VGS = 10 V • Low gate charge (typical 220 nC) • Low Crss (typical 200 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • 175°C maximum junction temperature rating QFET Description October 2006 ® These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Published: |