FQH90N15 - N-Channel Power MOSFET

Fairchild Semiconductor

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Datasheet Details

Part number	FQH90N15
Manufacturer	Fairchild Semiconductor
File Size	1.00 MB
Description	N-Channel Power MOSFET
Datasheet	FQH90N15_FairchildSemiconductor.pdf

FQH90N15 Product details

Description

October 2006 ® These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.These devices are well suited for low voltage applications such as audio amplifire, high efficiency switching for DC/DC converters, and DC motor

Features

90A, 150V, RDS(on) = 0.018Ω @VGS = 10 V.
Low gate charge (typical 220 nC).
Low Crss (typical 200 pF).
Fast switching.
100% avalanche tested.
Improved dv/dt capability.
175°C maximum junction temperature rating QFET.

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Published: Jun 1, 2007 |