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FQI13N06L

60V LOGIC N-Channel MOSFET

FQI13N06L Features

* 13.6A, 60V, RDS(on) = 0.11Ω @VGS = 10 V Low gate charge ( typical 4.8 nC) Low Crss ( typical 17 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G S G! ! " " "

FQI13N06L General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i.

FQI13N06L Datasheet (666.59 KB)

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Datasheet Details

Part number:

FQI13N06L

Manufacturer:

Fairchild Semiconductor

File Size:

666.59 KB

Description:

60v logic n-channel mosfet.

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FQI13N06L 60V LOGIC N-Channel MOSFET Fairchild Semiconductor

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