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FQI13N50C 500V N-Channel MOSFET

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Description

FQB13N50C/FQI13N50C FQB13N50C/FQI13N50C 500V N-Channel MOSFET October 2008 QFET® General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

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Datasheet Specifications

Part number
FQI13N50C
Manufacturer
Fairchild Semiconductor
File Size
967.87 KB
Datasheet
FQI13N50C_FairchildSemiconductor.pdf
Description
500V N-Channel MOSFET

Features

* 13A, 500V, RDS(on) = 0.48Ω @VGS = 10 V
* Low gate charge ( typical 43nC)
* Low Crss ( typical 20pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability
* RoHS Compliant D GS D2-PAK FQB Series GDS I2-PAK FQI Series D !

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