FQI13N50C Datasheet (Fairchild Semiconductor)

FQI13N50C, 500V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i

FQI13N50C Features

* 13A, 500V, RDS(on) = 0.48Ω @VGS = 10 V

* Low gate charge ( typical 43nC)

* Low Crss ( typical 20pF)

* Fast switching

* 100% avalanche tested

* Improved dv/dt capability

* RoHS Compliant D GS D2-PAK FQB Series GDS I2-PAK FQI Series D !