Datasheet4U Logo Datasheet4U.com

FQI13N10

100V N-Channel MOSFET

FQI13N10 Features

* 12.8A, 100V, RDS(on) = 0.18Ω @VGS = 10 V Low gate charge ( typical 12 nC) Low Crss ( typical 20 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G S G! ! " " "

FQI13N10 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse.

FQI13N10 Datasheet (628.84 KB)

Preview of FQI13N10 PDF

Datasheet Details

Part number:

FQI13N10

Manufacturer:

Fairchild Semiconductor

File Size:

628.84 KB

Description:

100v n-channel mosfet.

📁 Related Datasheet

FQI13N10L 100V LOGIC N-Channel MOSFET (Fairchild Semiconductor)

FQI13N06 60V N-Channel MOSFET (Fairchild Semiconductor)

FQI13N06L 60V LOGIC N-Channel MOSFET (Fairchild Semiconductor)

FQI13N50 500V N-Channel MOSFET (Fairchild Semiconductor)

FQI13N50C 500V N-Channel MOSFET (Fairchild Semiconductor)

FQI10N20 200V N-Channel MOSFET (Fairchild Semiconductor)

FQI10N20C 200V N-Channel MOSFET (Fairchild Semiconductor)

FQI10N20L 200V LOGIC N-Channel MOSFET (Fairchild Semiconductor)

FQI10N60C 600V N-Channel MOSFET (Fairchild Semiconductor)

FQI11N40 400V N-Channel MOSFET (Fairchild Semiconductor)

TAGS

FQI13N10 100V N-Channel MOSFET Fairchild Semiconductor

Image Gallery

FQI13N10 Datasheet Preview Page 2 FQI13N10 Datasheet Preview Page 3

FQI13N10 Distributor