FQI13N10 100V N-Channel MOSFET

Fairchild Semiconductor

Description

FQB13N10 / FQI13N10 January 2001 QFET FQB13N10 / FQI13N10 100V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

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Datasheet Specifications

Part number: FQI13N10
Manufacturer: Fairchild Semiconductor
File Size: 628.84 KB
Datasheet: FQI13N10_FairchildSemiconductor.pdf
Description: 100V N-Channel MOSFET

Features

* 12.8A, 100V, RDS(on) = 0.18Ω @VGS = 10 V Low gate charge ( typical 12 nC) Low Crss ( typical 20 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G S G! ! " " "

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FQI13N10 100V N-Channel MOSFET Fairchild Semiconductor

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